The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1991
Filed:
Jun. 26, 1989
Applicant:
Inventor:
Mikihiro Kimura, Itami, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ; G01R / ;
U.S. Cl.
CPC ...
3241 / ; 3241 / ; 3241 / ; 437-8 ;
Abstract
Disclosed is a method of measuring physical properties of a buried channel, e.g., a generation current in a semiconductor substrate in which the buried channel is formed, a generation current of the surface of the semiconductor substrate, a channel potential and a surface potential of the buried channel. A gate ramp voltage is applied to a gate electrode formed over the buried channel and a current generated from a depletion layer at the buried channel and a gate current produced by changes in the capacitance of the buried channel are measured. The physical properties of the buried channel are obtained from the measured currents.