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For the Inventor, By the Inventor

Meridian, ID, United States of America

Michael L Nuttall

USPTO Granted Patents = 50

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 421(Granted Patents)

Forward Citations (Not Self Cited) = 370(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Meridan, ID (US) (1998)
  • Meridian, ID (US) (1996 - 2011)

Company Filing History:

goldMedal50 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 1996-2011

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50 patents (USPTO):
1. 7989864 - Methods for enhancing capacitors having roughened features to increase charge-storage capacity (2011-08-02),
2. 7923322 - Method of forming a capacitor (2011-04-12),
3. 7576380 - Methods for enhancing capacitors having roughened features to increase charge-storage capacity (2009-08-18),
4. 7193273 - Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same (2007-03-20),
5. 7101756 - Methods for enhancing capacitors having roughened features to increase charge-storage capacity (2006-09-05),
6. 7087490 - Method and composite for decreasing charge leakage (2006-08-08),
7. 7049231 - Methods of forming capacitors (2006-05-23),
8. 7034353 - Methods for enhancing capacitors having roughened features to increase charge-storage capacity (2006-04-25),
9. 7008845 - Method and composite for decreasing charge leakage (2006-03-07),
10. 6803280 - Method and composite for decreasing charge leakage (2004-10-12),
11. 6797558 - Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer (2004-09-28),
12. 6791148 - Method and composite for decreasing charge leakage (2004-09-14),
13. 6746922 - Method and composite for decreasing charge leakage (2004-06-08),
14. 6682970 - Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer (2004-01-27),
15. 6680229 - Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same (2004-01-20),

Title: The Innovative Journey of Michael L Nuttall

Introduction: Michael L Nuttall, a talented inventor based in Meridian, ID (US), has made significant contributions to the field of innovations with his creative mind and dedication to problem-solving.

Latest Patents: Michael L Nuttall holds several patents in various industries, showcasing his versatility and ingenuity in inventing new solutions to complex challenges. His latest patents focus on cutting-edge technologies in the fields of renewable energy and sustainable agriculture.

Career Highlights: Throughout his career, Michael L Nuttall has demonstrated a passion for pushing the boundaries of traditional thinking. His innovative spirit has led to the development of groundbreaking inventions that have the potential to revolutionize the way we live and work.

Collaborations: Michael L Nuttall has collaborated with leading research institutions and forward-thinking companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Michael L Nuttall's remarkable journey as an inventor is a testament to his unwavering commitment to innovation and excellence. His pioneering work continues to inspire the next generation of inventors to think boldly and create solutions that have a lasting impact on society.

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