The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Aug. 09, 2006
Applicants:

Randhir P. S. Thakur, Cupertino, CA (US);

Garry A. Mercaldi, Meridian, ID (US);

Michael Nuttall, Meridian, ID (US);

Shenline Chen, Boise, ID (US);

Er-xuan Ping, Meridian, ID (US);

Inventors:

Randhir P. S. Thakur, Cupertino, CA (US);

Garry A. Mercaldi, Meridian, ID (US);

Michael Nuttall, Meridian, ID (US);

Shenline Chen, Boise, ID (US);

Er-Xuan Ping, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.


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