Portland, OR, United States of America

Michael L Hattendorf

This inventor holds 87 USPTO granted patents and 28 published patent applications and 8 EPO patents, primarily in Integrated Circuit Fabrication (CPC class H01L21-823431). Top assignee: Intel Corporation. Active years: 2007-2026.

USPTO Granted Patents = 87 

% Patents Active = 92.0

 

Average Co-Inventor Count = 4.1

ph-index = 10

Forward Citations = 533(Granted Patents)

Forward Citations (Not Self Cited) = 423(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Beaverton, OR (US) (2007 - 2013)
  • Aloha, OR (US) (2016)
  • Portland, OR (US) (2014 - 2024)

Company Filing History:


Years Active: 2007-2026

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Areas of Expertise:
Integrated Circuits
Fin Structures
Trench Contacts
Metal Silicides
Gate Electrode
Epitaxial Regions
Isolation Techniques
Contact Structures
Interconnect Lines
Dual Metal Gates
Fabrication Methods
Advanced Structures
87 patents (USPTO):Explore Patents

Title: Michael L. Hattendorf: Innovator in Advanced Integrated Circuit Fabrication

Introduction

Michael L. Hattendorf is a prominent inventor based in Portland, Oregon. He holds an impressive total of 81 patents, contributing significantly to the field of integrated circuit architecture. His work primarily revolves around advanced fabrication techniques that push the boundaries of semiconductor technology.

Latest Patents

Among his latest patents is one focused on "Dual metal silicide structures for advanced integrated circuit structure fabrication." This innovation addresses the challenges of fabricating integrated circuit structures at the 10 nanometer node and smaller. The patent describes a structure that includes a P-type semiconductor device above a substrate, featuring first and second semiconductor source or drain regions adjacent to the sides of a gate electrode. Furthermore, a first metal silicide layer is positioned directly on these semiconductor regions, showcasing a design that utilizes different metal species to enhance performance.

Another recent patent by Hattendorf involves "Plugs for interconnect lines for advanced integrated circuit structure fabrication." This invention involves an innovative design where an isolation structure surrounds a lower fin portion of an integrated circuit. The use of a semiconductor material on the top surface of the insulating material demonstrates a novel approach to creating gate dielectric layers, which further contributes to the advancement of integrated circuit technology.

Career Highlights

Michael L. Hattendorf has been a key figure at Intel Corporation, where he has dedicated his expertise to semiconductor innovations. His impactful contributions to integrated circuit structure fabrication reflect his deep understanding of the intricacies involved in improving semiconductor performance. His patents highlight a commitment to addressing current challenges in the industry.

Collaborations

Throughout his career, Hattendorf has collaborated with notable colleagues, including Christopher P. Auth and Byron Ho. These partnerships underscore the collaborative nature of research and innovation within Intel, fostering a creative environment that leads to breakthroughs in technology.

Conclusion

Michael L. Hattendorf's extensive portfolio of patents and his work at Intel Corporation place him at the forefront of advancements in integrated circuit fabrication. His contributions not only enhance technological capabilities but also pave the way for future innovations in the semiconductor industry. As technology continues to advance, the work of inventors like Hattendorf remains crucial in shaping the future of electronics.

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