The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Mar. 29, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Byron Ho, Hillsboro, OR (US);

Michael L. Hattendorf, Portland, OR (US);

Christopher P. Auth, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H10B 10/00 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/0337 (2013.01); H01L 21/28247 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/76801 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76834 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/5329 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 28/20 (2013.01); H01L 28/24 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/41783 (2013.01); H01L 29/41791 (2013.01); H01L 29/516 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/7843 (2013.01); H01L 29/7845 (2013.01); H01L 29/7846 (2013.01); H01L 29/7848 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/7854 (2013.01); H10B 10/12 (2023.02); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0332 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 29/665 (2013.01); H01L 29/7842 (2013.01); H01L 29/7853 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01);
Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first silicon fin having a longest dimension along a first direction. A second silicon fin having a longest dimension is along the first direction. An insulator material is between the first silicon fin and the second silicon fin. A gate line is over the first silicon fin and over the second silicon fin along a second direction, the second direction orthogonal to the first direction, the gate line having a first side and a second side, wherein the gate line has a discontinuity over the insulator material, the discontinuity filled by a dielectric plug.


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