Company Filing History:

7 out of 3,081

Trw Limited

patents

7 out of 3,381

Northrop Grumman Systems Corporation

patents

1 out of 28

Northrop Grumman Space & Mission Systems Corporation

patents

Years Active: 2001-2014

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8809907 - Leakage barrier for GaN based HEMT active device (2014-08-19),

2. 8809137 - Leakage barrier for GaN based HEMT active device (2014-08-19),

3. 8026132 - Leakage barrier for GaN based HEMT active device (2011-09-27),

4. 7709860 - High electron mobility transistor semiconductor device and fabrication method thereof (2010-05-04),

5. 7041579 - Hard substrate wafer sawing process (2006-05-09),

6. 6764573 - Wafer thinning techniques (2004-07-20),

7. 6710379 - Fully relaxed channel HEMT device (2004-03-23),

8. 6638366 - Automated spray cleaning apparatus for semiconductor wafers (2003-10-28),

9. 6551905 - Wafer adhesive for semiconductor dry etch applications (2003-04-22),

10. 6524899 - Process for forming a large area, high gate current HEMT diode (2003-02-25),

11. 6515316 - Partially relaxed channel HEMT device (2003-02-04),

12. 6452221 - Enhancement mode device (2002-09-17),

13. 6396679 - Single-layer dielectric structure with rounded corners, and circuits including such structures (2002-05-28),

14. 6383826 - Method for determining etch depth (2002-05-07),

15. 6245687 - Precision wide band gap semiconductor etching (2001-06-12),

Title: Inventor Spotlight: Michael Edward Barsky

Introduction

Michael Edward Barsky is an accomplished inventor based in Sherman Oaks, California, holding a remarkable portfolio of 15 patents. His contributions to the field of technology, particularly in the development of high-electron-mobility transistor (HEMT) devices, exemplify his commitment to innovation and improvement of semiconductor performance.

Latest Patents

Among his latest inventions, Barsky has developed a significant patent for a leakage barrier for GaN-based HEMT active devices. This invention presents an advanced HEMT constructed from a gallium nitride (GaN) materials system, which successfully reduces gate leakage current. By addressing the problems of current constrictions associated with the deposition of gate metal over step discontinuities in the gate mesa, his design incorporates a method of back-filling these step discontinuities with an insulating material, such as silicon nitride (SiN). This innovative solution allows for a flat surface relative to the source and drain regions, leading to enhanced performance by significantly minimizing leakage currents and current constrictions.

Career Highlights

Throughout his career, Barsky has worked with notable organizations including TRW Limited and Northrop Grumman Systems Corporation. His experience in these companies has played a crucial role in shaping his technical expertise and innovative thinking, paving the way for his numerous patent developments.

Collaborations

In his professional journey, Barsky has collaborated with several esteemed colleagues, notably Michael Wojtowicz and Richard Lai. These partnerships have fostered a creative and innovative environment, contributing to the success of various projects and patent developments within the technology sector.

Conclusion

Michael Edward Barsky’s impressive collection of patents and his innovative breakthroughs position him as a notable figure in the landscape of semiconductor technology. With his pioneering work on GaN-based HEMT devices, his contributions are sure to have a lasting impact on the industry and inspire future innovations.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.