The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2003

Filed:

Oct. 20, 2000
Applicant:
Inventors:

Michael E. Barsky, Sherman Oaks, CA (US);

Harvey N. Rogers, Playa Del Rey, CA (US);

Vladimir Medvedev, Rancho Palos Verdes, CA (US);

Yaochung Chen, Rancho Palos Verdes, CA (US);

Richard Lai, Redondo Beach, CA (US);

Assignee:

TRW Inc., Redondo Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/130 ; H01L 2/146 ;
U.S. Cl.
CPC ...
H01L 2/130 ; H01L 2/146 ;
Abstract

A method is provided for backside processing a semiconductor wafer ( ) including applying a polymer based protective coating ( ) on the wafer, depositing a barrier layer of ceramic ( ) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive ( ). Thereafter, the wafer ( ) is bonded to a perforated substrate ( ) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer ( ). After etching and subsequent backside processing, the adhesive layer ( ) is dissolved in acetone to separate the wafer ( ) from the substrate ( ). The protective coating ( ) is then dissolved with a solvent to separate the ceramic layer ( ) from the finished wafer ( ).


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