The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Jul. 14, 2000
Applicant:
Inventors:
Michael Wojtowicz, Long Beach, CA (US);
Tsung-Pei Chin, Marina Del Rey, CA (US);
Michael E. Barsky, Sherman Oaks, CA (US);
Ronald W. Grundbacher, Hermosa Beach, CA (US);
Assignee:
TRW Inc., Redondo Beach, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9778 ;
U.S. Cl.
CPC ...
H01L 2/9778 ;
Abstract
A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.