Goleta, CA, United States of America

Michael D Craven

USPTO Granted Patents = 11 

 

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 215(Granted Patents)


Location History:

  • San Jose, CA (US) (2012 - 2015)
  • Goleta, CA (US) (2005 - 2018)

Company Filing History:


Years Active: 2005-2018

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11 patents (USPTO):

Title: The Innovations of Michael D. Craven

Introduction

Michael D. Craven is a prominent inventor based in Goleta, California. He holds a total of 11 patents, showcasing his significant contributions to the field of materials science and engineering. His work primarily focuses on non-polar gallium nitride (GaN) and its applications in quantum wells.

Latest Patents

One of his latest patents is titled "Non-polar (Al,B,In,Ga)N quantum wells." This patent describes a method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD), with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs follows a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is achieved at a quantum well width of 52 Å for the a-plane MQWs. Another significant patent is "Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition." This patent details the growth of non-polar (110) a-plane gallium nitride (GaN) films with planar surfaces on (102) r-plane sapphire substrates, employing a low-temperature nucleation layer as a buffer layer prior to high-temperature growth.

Career Highlights

Throughout his career, Michael D. Craven has worked with esteemed institutions such as the University of California and the Japan Science and Technology Agency. His research has significantly advanced the understanding and application of non-polar GaN materials.

Collaborations

Michael has collaborated with notable colleagues, including Steven P. DenBaars and James Stephen Speck. Their joint efforts have contributed to the advancement of GaN technology and its applications.

Conclusion

Michael D. Craven's innovative work in the field of gallium nitride has led to numerous patents and collaborations that continue to influence the industry. His contributions are vital to the ongoing development of advanced materials and technologies.

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