The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jun. 02, 2011
Applicants:
Michael D. Craven, San Jose, CA (US);
James Stephen Speck, Goleta, CA (US);
Inventors:
Michael D. Craven, San Jose, CA (US);
James Stephen Speck, Goleta, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 25/02 (2006.01); C30B 25/04 (2006.01); C30B 25/10 (2006.01); C30B 29/60 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); C30B 25/02 (2013.01); C30B 25/04 (2013.01); C30B 25/105 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); C30B 29/605 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01);
Abstract
Non-polar (110) a-plane gallium nitride (GaN) films with planar surfaces are grown on (102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (110) a-plane GaN thin films.