The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Apr. 15, 2003
Michael D. Craven, Goleta, CA (US);
Stacia Keller, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Tal Margalith, Santa Barbara, CA (US);
James Stephen Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Umesh K. Mishra, Santa Barbara, CA (US);
Michael D. Craven, Goleta, CA (US);
Stacia Keller, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Tal Margalith, Santa Barbara, CA (US);
James Stephen Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Umesh K. Mishra, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar ({overscore ()}) a-plane GaN layers are grown on an r-plane ({overscore ()}) sapphire substrate using MOCVD. These non-polar ({overscore ()}) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.