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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9893236 B1

PDFFull Text
Date of Patent:
Feb. 13, 2018

Filed:

Oct. 23, 2015

Non-polar (al,b,in,ga)n quantum wells

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Michael D. Craven, Goleta, CA (US);

Steven P. DenBaars, Goleta, CA (US);

Assignees:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi, JP;

Attorney:

Gates & Cooper LLP

Primary Examiner:

David Vu

Assistant Examiner:

Brandon Fox

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/24 (2010.01); C30B 25/02 (2006.01); C30B 25/04 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01); H01L 21/02 (2006.01); H01L 29/15 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); C30B 25/02 (2013.01); C30B 25/04 (2013.01); C30B 25/105 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/605 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 29/155 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01); H01L 29/2003 (2013.01);
Abstract

A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

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