The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2008
Filed:
Jul. 15, 2003
Benjamin A. Haskell, Goleta, CA (US);
Paul T. Fini, Santa Barbara, CA (US);
Shigemasa Matsuda, Tokyo, JP;
Michael D. Craven, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Benjamin A. Haskell, Goleta, CA (US);
Paul T. Fini, Santa Barbara, CA (US);
Shigemasa Matsuda, Tokyo, JP;
Michael D. Craven, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
The Japan Science and Technology Agency, Saitama Prefecture, JP;
Abstract
Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.