Tokyo, Japan

Shigemasa Matsuda


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2008-2013

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2 patents (USPTO):

Title: Shigemasa Matsuda: Innovator in Nitride Film Growth

Introduction

Shigemasa Matsuda is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the growth of nitride films. With a total of 2 patents, his work has paved the way for advancements in device fabrication.

Latest Patents

Matsuda's latest patents include innovative methods for the growth of planar, non-polar, group-III nitride films. These methods describe the growth techniques that result in films suitable for subsequent device regrowth. Another notable patent focuses on the growth of planar, non-polar gallium nitride using hydride vapor phase epitaxy (HVPE). The highly planar non-polar GaN films produced by this method are also suitable for various growth techniques in device fabrication.

Career Highlights

Throughout his career, Matsuda has worked with esteemed institutions such as the University of California and the Japan Science and Technology Agency. His research has significantly impacted the semiconductor industry, particularly in the development of nitride-based devices.

Collaborations

Matsuda has collaborated with notable individuals in his field, including Benjamin A. Haskell and Paul Thomas Fini. These collaborations have further enhanced the quality and reach of his research.

Conclusion

Shigemasa Matsuda's contributions to the growth of nitride films have established him as a key figure in semiconductor innovation. His patents and collaborations continue to influence advancements in the field.

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