The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Feb. 01, 2007
Applicants:
Benjamin A. Haskell, Goleta, CA (US);
Michael D. Craven, Goleta, CA (US);
Paul T. Fini, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Inventors:
Benjamin A. Haskell, Goleta, CA (US);
Michael D. Craven, Goleta, CA (US);
Paul T. Fini, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Assignees:
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Kawaguchi, Saitama Prefecture, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.