University of California

Japan Science and Technology Agency

Japan Science and Technology Center

Michael D Craven

Steven P DenBaars

James Stephen Speck

Shuji Nakamura

Benjamin A Haskell

Paul Thomas Fini

Umesh Kumar Mishra

Stacia Keller

Tal Margalith

Shigemasa Matsuda

A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 &#x212b; to 70 &#x212b;. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 &#x212b; for the a-plane MQWs.

Non-polar (Al,B,In,Ga)N quantum wells

Non-polar (110) a-plane gallium nitride (GaN) films with planar surfaces are grown on (102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (110) a-plane GaN thin films.

Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition

Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Dislocation reduction in non-polar III-nitride thin films

Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Growth of planar, non-polar, group-III nitride films

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (110) a-plane GaN layers are grown on an r-plane (102) sapphire substrate using MOCVD. These non-polar (110) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (110) a-plane GaN layers are grown on an r-plane (102) sapphire substrate using MOCVD. These non-polar (110) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.

Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Growth of reduced dislocation density non-polar gallium nitride

Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar ({overscore ()}) a-plane GaN layers are grown on an r-plane ({overscore ()}) sapphire substrate using MOCVD. These non-polar ({overscore ()}) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Growing community of inventors

Goleta, CA, United States of America

Michael D Craven