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Location History:
- Palo Also, CA (US) (2003)
- Palo Alto, CA (US) (1986 - 2018)
Company Filing History:
Years Active: 1986-2018
Title: **Innovative Contributions of Matthew S. Buynoski in Semiconductor Technology**
Introduction: Matthew S. Buynoski, based in Palo Alto, CA, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 132 patents, he has been instrumental in advancing memory device fabrication methods. His innovative approaches have paved the way for enhanced performance and efficiency in memory devices.
Latest Patents: Buynoski’s latest patents focus on methods of forming controllably conductive oxides for memory devices. One of his notable inventions involves the fabrication process where a first electrode is provided, followed by the application of an oxide layer that may have oxygen deficiencies and defects. This is further complemented by the addition of a second electrode on the oxide layer. Another method he developed includes an alloy formation on a first electrode, oxidizing it to produce an oxide layer and then applying a second electrode. His latest work continues to enhance the reliability and functionality of memory devices through innovative oxide layer engineering.
Career Highlights: Over the years, Matthew S. Buynoski has contributed to leading technology companies, including Advanced Micro Devices Corporation and Spansion LLC. His work has not only led to numerous patents but also significantly impacted the semiconductor industry by providing practical solutions to complex technological challenges.
Collaborations: Throughout his career, Buynoski has collaborated with fellow innovators such as Paul Raymond Besser and Qi Xiang. These collaborations have fostered an environment of creativity and innovation, enabling the development of groundbreaking technologies in the field of memory devices.
Conclusion: Matthew S. Buynoski's dedication to innovation and his impressive array of patents underscore his role as a significant contributor to semiconductor technology. His methods of forming controllably conductive oxides reflect a commitment to advancing memory device fabrication, ensuring the continued evolution of this essential technology.
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