The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Jan. 12, 2004
Applicants:
Matthew S. Buynoski, Palo Alto, CA (US);
Judy Xilin an, San Jose, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Inventors:
Matthew S. Buynoski, Palo Alto, CA (US);
Judy Xilin An, San Jose, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Assignee:
Globalfoundries, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.