The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Sep. 07, 2016
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Matthew Buynoski, Palo Alto, CA (US);
Seungmoo Choi, Newport Beach, CA (US);
Chakravarthy Gopalan, Santa Clara, CA (US);
Dongxiang Liao, Sunnyvale, CA (US);
Christie Marrian, San Jose, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 45/00 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01L 45/165 (2013.01); H01L 21/31683 (2013.01); H01L 45/04 (2013.01); H01L 45/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1608 (2013.01); H01L 45/1633 (2013.01); H01L 45/08 (2013.01);
Abstract
In fabricating a memory device, a first electrode is provided. An oxide layer is provided on the first electrode. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. An oxide layer is provided on the first electrode, the oxide layer comprising an oxygen deficiency and/or defects therein. A second electrode is then provided on the oxide layer.