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For the Inventor, By the Inventor

Suzuka, Japan

Masayuki Tebakari

This inventor holds 13 USPTO granted patents and 7 EPO patents. Top assignee: Mitsubishi Materials Corporation. Active years: 2011-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masayuki Tebakari. Retrieved from https://idiyas.com/inventor/masayuki-tebakari

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13

% Patents Active = 76.9

 

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Suzuka, JP (2011 - 2014)
  • Saitama, JP (2011 - 2015)

Company Filing History:

goldMedal13 out of 1,556 
 
Mitsubishi Materials Corporation
 patents

Years Active: 2011-2015

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13 patents (USPTO):Explore Patents
1. 9216444 - Reactor cleaning apparatus (2015-12-22),
2. 9090962 - Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon (2015-07-28),
3. 8840723 - Manufacturing apparatus of polycrystalline silicon (2014-09-23),
4. 8703248 - Polycrystalline silicon reactor (2014-04-22),
5. 8652256 - Manufacturing apparatus of polycrystalline silicon (2014-02-18),
6. 8623139 - Apparatus for producing polycrystalline silicon (2014-01-07),
7. 8329132 - Polycrystalline silicon manufacturing apparatus and manufacturing method (2012-12-11),
8. 8282902 - Apparatus for producing trichlorosilane, and method for producing trichlorosilane (2012-10-09),
9. 8187382 - Polycrystalline silicon manufacturing apparatus (2012-05-29),
10. 8043660 - Method for manufacturing polycrystalline silicon (2011-10-25),
11. 8017099 - Method for producing polycrystalline silicon, and facility for producing polycrystalline silicon (2011-09-13),
12. 7975709 - Reactor cleaning apparatus (2011-07-12),
13. 7875349 - Polymer inactivation method for polycrystalline silicon manufacturing device (2011-01-25),

Title: Masayuki Tebakari: Innovator in Polycrystalline Silicon Technology

Introduction

Masayuki Tebakari is a prominent inventor based in Suzuka, Japan. He has made significant contributions to the field of polycrystalline silicon production, holding a total of 13 patents. His innovative work has advanced the technology used in the semiconductor industry.

Latest Patents

One of his latest patents is a reactor cleaning apparatus designed to clean the inner wall surface of a reactor that generates polycrystalline silicon. This apparatus features a dual-structured bell jar, a tray with a through hole, and a nozzle device that sprays cleaning water at high pressure in three-dimensional directions. Additionally, it includes a drive mechanism that allows for the rotation and vertical movement of the shaft, along with steam piping for supplying steam within the reactor.

Another notable patent involves a silicon seed rod assembly used for producing polycrystalline silicon through a vapor deposition method. This assembly consists of two rod-shaped silicon seed rods connected by a silicon connection member. The design includes a sharper opening-end peripheral edge on one side of the connection member, enhancing its efficiency in the production process.

Career Highlights

Masayuki Tebakari is currently employed at Mitsubishi Materials Corporation, where he continues to innovate and develop new technologies in the field of silicon production. His work has been instrumental in improving the efficiency and effectiveness of polycrystalline silicon manufacturing processes.

Collaborations

Throughout his career, Tebakari has collaborated with notable colleagues, including Toshihide Endoh and Toshiyuki Ishii. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Masayuki Tebakari's contributions to the field of polycrystalline silicon technology are significant and impactful. His innovative patents and collaborative efforts continue to shape the future of silicon production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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