The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Mar. 26, 2009
Applicants:
Toshihide Endoh, Suzuka, JP;
Masayuki Tebakari, Suzuka, JP;
Toshiyuki Ishii, Yokkaichi, JP;
Masaaki Sakaguchi, Suzuka, JP;
Inventors:
Toshihide Endoh, Suzuka, JP;
Masayuki Tebakari, Suzuka, JP;
Toshiyuki Ishii, Yokkaichi, JP;
Masaaki Sakaguchi, Suzuka, JP;
Assignee:
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.