The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Nov. 21, 2008
Toshihide Endoh, Suzuka, JP;
Masayuki Tebakari, Saitama, JP;
Toshiyuki Ishii, Yokkaichi, JP;
Masaaki Sakaguchi, Suzuka, JP;
Naoki Hatakeyama, Yokkaichi, JP;
Toshihide Endoh, Suzuka, JP;
Masayuki Tebakari, Saitama, JP;
Toshiyuki Ishii, Yokkaichi, JP;
Masaaki Sakaguchi, Suzuka, JP;
Naoki Hatakeyama, Yokkaichi, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Abstract
A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying portsA for ejecting raw gas upward in a reactorand gas exhausting portsfor exhausting exhaust gas after a reaction are provided on an inner bottom of the reactorin which a plurality of silicon seed rodsare stood, the silicon seed rodsare heated and the polycrystalline silicon is deposited from the raw gas on the surfaces. The apparatus includes gas distributing tubesthat are respectively connected to the gas supplying portsA and respectively supply the raw gas to the gas supplying portsA, valvesthat are provided on at least the gas distributing tubes connected to the gas supplying portsA adjacent to a center of the reactorand open or close conduit lines of the gas distributing tubes, and a valve controlling devicethat is connected to the valvesand controls the conduit lines to be closed for a predetermined time at an early stage of the reaction.