The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2012

Filed:

Mar. 20, 2009
Applicants:

Toshihide Endoh, Suzuka, JP;

Masayuki Tebakari, Suzuka, JP;

Toshiyuki Ishii, Yokkaichi, JP;

Masaaki Sakaguchi, Suzuka, JP;

Inventors:

Toshihide Endoh, Suzuka, JP;

Masayuki Tebakari, Suzuka, JP;

Toshiyuki Ishii, Yokkaichi, JP;

Masaaki Sakaguchi, Suzuka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas.


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