The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Oct. 26, 2007
Applicant:
Masayuki Tebakari, Saitama, JP;
Inventor:
Masayuki Tebakari, Saitama, JP;
Assignee:
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiHCl, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.