Tokyo, Japan

Masayuki Furuhashi


Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2014-2023

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9 patents (USPTO):Explore Patents

Title: Masayuki Furuhashi: Innovator in Semiconductor Technology

Introduction

Masayuki Furuhashi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on innovative semiconductor devices that enhance performance and efficiency.

Latest Patents

Furuhashi's latest patents include a semiconductor device featuring trench gate electrodes formed in first pillars. This design incorporates source layers that are deeper into the substrate than those in second pillars. Another notable patent describes a semiconductor device that includes an active region with a switchable current path, utilizing a superjunction layer composed of first and second pillars of different conductivity types.

Career Highlights

Masayuki Furuhashi is currently employed at Mitsubishi Electric Corporation, where he continues to advance semiconductor technology. His expertise and innovative designs have positioned him as a key figure in the industry.

Collaborations

Furuhashi has collaborated with notable coworkers, including Toshikazu Tanioka and Tomokatsu Watanabe. Their combined efforts contribute to the ongoing development of cutting-edge semiconductor solutions.

Conclusion

Masayuki Furuhashi's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of electronic devices.

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