The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Mar. 07, 2014
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Masayuki Furuhashi, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-ku, JP;
Abstract
A silicon carbide semiconductor device capable of effectively increasing a threshold voltage and a method for manufacturing the silicon carbide semiconductor device. The silicon carbide semiconductor device includes a gate insulating film formed on part of surfaces of the well regions and the source region; and a gate electrode formed on a surface of the gate insulating film so as to be opposite to an end portion of the source region and the well regions. Furthermore, the gate insulating film has, in an interface region between the well regions and the gate insulating film, defects that each form a first trap having an energy level deeper than a conduction band end of silicon carbide and that include a bond between silicon and hydrogen.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile