The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jun. 02, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Masayuki Furuhashi, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A semiconductor device includes a semiconductor substrate, and a semiconductor layer disposed on the semiconductor substrate. First and second pillar layers, of respective first and second conductivity types, are alternately provided in a direction in parallel with a main surface in an active region of the semiconductor layer and in a termination region. A pillar pitch in the termination region is set to be larger than a pillar pitch in the active region. A product of a width of one of the first pillar layers and effective impurity concentration of the first conductivity of the one of the first pillar layers is equal to a product of a width of one of the second pillar layers and effective impurity concentration of the second conductivity of the one of the second pillar layers.