The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
May. 31, 2012
Tomokatsu Watanabe, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Masayuki Furuhashi, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Toshikazu Tanioka, Tokyo, JP;
Tomokatsu Watanabe, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Masayuki Furuhashi, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Toshikazu Tanioka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A silicon carbide semiconductor device that is able to increase the gate reliability, and to provide a method for manufacturing the silicon carbide semiconductor device, and that includes: a source electrode selectively formed on a source region; a gate insulating film formed so as to extend over the source region; and a gate electrode formed on the gate insulating film. The source region includes a first source region located below the source electrode, and a second source region surrounding the first source region. The doping concentration in a superficial layer of the second source region is lower than the doping concentration in a superficial layer of the first source region. The doping concentration in the second source region is higher in a deep portion than in a superficial portion thereof.