The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Oct. 25, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Masanao Ito, Tokyo, JP;
Masayuki Furuhashi, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device of the present invention includes a semiconductor region having a first main surface, wherein the semiconductor region includes: alternating n-type pillar layers and p-type pillar layers along the first main surface; a p-type first well layer located within each of the n-type pillar layers at a top surface of the n-type pillar layer; an n-type first source layer located within the first well layer at a top surface of the first well layer; a first side surface dielectric layer located on a side surface in a first trench located at each of boundaries between the n-type pillar layers and the p-type pillar layers, and being in contact with the first well layer and the first source layer; a first bottom surface dielectric layer located on a bottom surface in the first trench, and being at least partially in contact with one of the p-type pillar layers.