Hakusan, Japan

Masatoshi Arai

This inventor holds 25 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation, Calsonic Kansei Corporation. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masatoshi Arai. Retrieved from https://idiyas.com/inventor/masatoshi-arai-m8b9q2e2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 64.0

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 81(Granted Patents)


Location History:

  • Nakano-ku, JP (2006 - 2007)
  • Fuchu, JP (2013)
  • Tokyo, JP (2005 - 2014)
  • Hyogo-ken, JP (2014)
  • Himeji, JP (2014)
  • Ishikawa-ken, JP (2016)
  • Hakusan Ishikawa, JP (2017 - 2022)
  • Hakusan, JP (2019 - 2022)

Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
Semiconductor Device
Vertical Power MOSFET
Rectifier Circuit
Schottky Barrier Diode
Bonding Surface
Annular Groove
Manufacturing Method
Alarm Display System
Movable Personal Computer
Input Apparatus
Advertisement System
List Display Device
25 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Masatoshi Arai

Introduction

Masatoshi Arai, a prominent inventor hailing from Hakusan, Ishikawa, Japan, has significantly contributed to the field of semiconductor technology. With a remarkable portfolio of 22 patents, Arai's work reflects a dedication to advancing electronic devices and materials.

Latest Patents

Among his latest innovations, Arai developed a cutting-edge semiconductor device characterized by its intricate structure. This device includes a semiconductor part of a first conductivity type, featuring a trench at the front surface. The invention also incorporates a first electrode on the back surface and a second electrode on the front surface, with a first semiconductor layer of a second conductivity type situated inside the trench. An insulating film is used to electrically isolate components, with the second electrode establishing connections that include rectification properties.

Another notable patent by Arai describes a semiconductor device that involves first and second metal members along with a semiconductor element. This design includes several electrodes and semiconductor regions and introduces an arrangement where a second metal member is connected to the second electrode. Arai’s focus on overlapping structures in semiconductor regions enhances device efficiency and performance.

Career Highlights

Masatoshi Arai’s career encompasses significant tenures at renowned companies, including Toshiba Corporation and Calsonic Kansei Corporation. His experiences at these institutions have equipped him with insights and expertise essential for innovation in semiconductor technologies.

Collaborations

Throughout his career, Arai has collaborated with talented individuals such as Tatsuya Nishiwaki and Tsuyoshi Ohta. These partnerships have likely fostered creative brainstorming and development of innovative solutions within the semiconductor field.

Conclusion

Masatoshi Arai’s contributions to semiconductor devices illustrate a commitment to innovation and technology. With numerous patents under his belt, his work continues to influence advancements in electronic materials and designs. As the industry evolves, Arai's inventions serve as a testament to the critical role of dedicated inventors in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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