The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Aug. 29, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Kenya Kobayashi, Nonoichi Ishikawa, JP;

Masatoshi Arai, Hakusan Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/408 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device includes a layer having first and second surfaces and a first type first region, a second type second region in the layer between the first region and first surface, a first type third region in the layer between the second region and first surface, first and second gate electrodes, wherein the second region is between the first and second gate electrodes, a first field plate electrode between the second surface and first gate electrode, a second field plate electrode between the second surface and second gate electrode, a first film, at least a portion between the first field plate electrode and first region, a second film at least a portion between the second field plate electrode and first region, and a second type fourth region in the first region between the first and second films. A portion of the first region is between second and fourth regions.


Find Patent Forward Citations

Kobayashi, Kenya. (2018). Vertical power mosfet device (U.S. Patent No. 9954055). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9954055

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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