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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9660071 B1

PDFFull Text
Date of Patent:
May. 23, 2017

Filed:

Mar. 02, 2016

Semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroaki Katou, Nonoichi Ishikawa, JP;

Tatsuya Nishiwaki, Komatsu Ishikawa, JP;

Masatoshi Arai, Hakusan Ishikawa, JP;

Hiroaki Katsuda, Kanazawa Ishikawa, JP;

Chikako Yoshioka, Kanazawa Ishikawa, JP;

Yoshitaka Hokomoto, Kanazawa Ishikawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Robert Bachner

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01);
Abstract

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a conductive layer, a gate electrode, and a first electrode. The conductive layer includes a first portion, a second portion, and a third portion. The first portion is surrounded by the first semiconductor region via a first insulating portion. The second portion extends in a second direction, is provided on the first semiconductor region, and is provided on the second region. The third portion is connected between the first portion and the second portion and extends in a third direction. The first electrode is electrically connected to the third semiconductor region and the conductive layer. The second portion electrically connects the first electrode to the third portion.

Find Patent Forward Citations

Katou, Hiroaki. (2017). Semiconductor device (U.S. Patent No. 9660071). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9660071

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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