The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Nov. 13, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroaki Katou, Nonoichi Ishikawa, JP;

Masatoshi Arai, Hakusan Ishikawa, JP;

Chikako Yoshioka, Kanazawa Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0211 (2013.01); H01L 21/26513 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor device includes a first semiconductor region of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, each comprising a first part, on the first semiconductor region, wherein the second semiconductor regions are spaced apart in a first direction, a third semiconductor region of the first conductivity type on each of the second semiconductor regions, an insulation portion between two of the second semiconductor regions, the insulation portion having one side in contact with one of the first parts and the other side in contact with one of the third semiconductor regions, a first electrode within the insulation portion, a gate electrode spaced apart from the first electrode and within the insulation portion, and a second electrode on the third semiconductor region and electrically connected to the first electrode and the third semiconductor region.


Find Patent Forward Citations

Katou, Hiroaki. (2021). Semiconductor device (U.S. Patent No. 10903202). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10903202

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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