The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Aug. 30, 2017
Kabushiki Kaisha Toshiba, Tokyo, JP;
Shunsuke Nitta, Hakusan, JP;
Takeru Matsuoka, Nomi Ishikawa, JP;
Shunsuke Katoh, Komatsu Ishikawa, JP;
Masatoshi Arai, Hakusan Ishikawa, JP;
Shinya Ozawa, Kanazawa Ishikawa, JP;
Bungo Tanaka, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.