The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Feb. 04, 2016
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tatsuya Nishiwaki, Nonoichi Ishikawa, JP;
Masatoshi Arai, Hakusan Ishikawa, JP;
Hiroaki Katou, Nonoichi Ishikawa, JP;
Hiroaki Katsuda, Kanazawa Ishikawa, JP;
Chikako Yoshioka, Kanazawa Ishikawa, JP;
Rieko Matoba, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a gate interconnect, a second insulating layer, and a first electrode. The first semiconductor region includes a first region and a second region provided around the first region. The gate interconnect is provided on the second region. The gate interconnect includes a first portion and a second portion provided around the second portion. A thickness in the first direction of the second portion is thinner than a thickness in the first direction of the first portion. A length in the second direction of the gate interconnect is longer than a length in the third direction of the gate electrode. The first electrode contacts the gate interconnect.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile