Fujisawa, Japan

Masao Kuriyama

This inventor holds 40 USPTO granted patents, primarily in Nonvolatile Memory Technology. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1993-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masao Kuriyama. Retrieved from https://idiyas.com/inventor/masao-kuriyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 3.2

ph-index = 15

Forward Citations = 603(Granted Patents)


Location History:

  • Kawasaki, JP (1993 - 1996)
  • Kanagawa-ken, JP (2000)
  • Fujisawa, JP (1998 - 2008)

Company Filing History:


Years Active: 1993-2008

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Areas of Expertise:
Nonvolatile Memory
Semiconductor Device
Integrated Circuit
Read/Write Operations
Multivalue Data
Redundant Circuitry
Charge Pumping Circuit
Data Erasure
Memory Cell Array
High Speed Voltage Generator
Programming Circuitry
Bias Voltage Circuit
40 patents (USPTO):Explore Patents

Title: Masao Kuriyama - Innovative Inventor from Fujisawa

Introduction: Masao Kuriyama is a renowned inventor hailing from Fujisawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masao Kuriyama holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his diverse range of expertise and creativity.

Career Highlights: With over two decades of experience in the industry, Masao Kuriyama has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Masao Kuriyama has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Masao Kuriyama's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and creators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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