Yokohama, Japan

Masahiko Hasunuma

This inventor holds 49 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1988-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiko Hasunuma. Retrieved from https://idiyas.com/inventor/masahiko-hasunuma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 67.3

Average Co-Inventor Count = 3.6

ph-index = 15

Forward Citations = 563(Granted Patents)


Location History:

  • Tokyo, JP (1988)
  • Kanagawa, JP (2008 - 2012)
  • Yokohama, JP (1989 - 2014)

Company Filing History:


Years Active: 1988-2014

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Oxidized Metal Film
Piezoelectric Thin Film
Thermally Treated Copper
Interconnect Metallization
Insulating Film
Wiring Structure
Temperature Control
Diffusion Barrier Layer
High Reliability Interconnection
Wafer Processing Equipment
49 patents (USPTO):Explore Patents

Title: **Masahiko Hasunuma: Innovator in Semiconductor Technology**

Introduction

Masahiko Hasunuma is a prominent inventor based in Yokohama, Japan, known for his groundbreaking contributions to semiconductor technology. With a remarkable portfolio of 49 patents, Hasunuma has continually pushed the boundaries of innovation in the field. His work has played a vital role in advancing semiconductor devices and manufacturing methods.

Latest Patents

Hasunuma's latest patents exemplify his expertise in semiconductor technology. One of his notable inventions is a "Semiconductor device and semiconductor device manufacturing method." This device features an interconnect on a first interlayer insulating film that covers a semiconductor substrate where an element is formed. It includes a cap layer on the interconnect's upper surface and a barrier film between the interconnect and a second interlayer insulating film. The design incorporates a high-melting-point conductive layer, where the width of the interconnect is intentionally smaller than that of the cap layer. Furthermore, the barrier film comprises a compound of an element contained in the high-melting-point conductive layer.

Another significant patent is titled "Semiconductor device having oxidized metal film and manufacture method of the same." This invention outlines a method for manufacturing a semiconductor device that involves heating a substrate with an insulation film to a specified temperature, allowing oxidizing species to be emitted. Following this, a metal film is formed on the insulation film at a lower temperature, and part of the metal film is oxidized using the remaining oxidizing species in the insulating film.

Career Highlights

Throughout his career, Masahiko Hasunuma has made significant contributions while working with esteemed institutions. He has been associated with Kabushiki Kaisha Toshiba, a leading company in electronic products and technology, which has greatly influenced his development in semiconductor innovations.

Collaborations

Masahiko Hasunuma has collaborated with several notable individuals in the tech industry. His colleagues include Hisashi Kaneko and Sachiyo Ito, who have undoubtedly contributed to advancing their respective fields alongside Hasunuma.

Conclusion

Masahiko Hasunuma stands out as a leading innovator in semiconductor technology. With a substantial number of patents and significant collaborations throughout his career, he continues to make remarkable contributions to the industry. His latest inventions not only showcase his ingenuity but also pave the way for future technological advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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