The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Oct. 28, 2004
Naofumi Nakamura, Yokohama, JP;
Noriaki Matsunaga, Chigasaki, JP;
Sachiyo Ito, Yokohama, JP;
Masahiko Hasunuma, Yokohama, JP;
Takeshi Nishioka, Yokohama, JP;
Naofumi Nakamura, Yokohama, JP;
Noriaki Matsunaga, Chigasaki, JP;
Sachiyo Ito, Yokohama, JP;
Masahiko Hasunuma, Yokohama, JP;
Takeshi Nishioka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first insulating layer provided above a semiconductor substrate. The first insulating layer includes a layer consisting essentially of a material having a relative dielectric constant smaller than 3. The first insulating layer includes a first integral structure consisting of a plug and wiring. The upper surface of the wiring is flush with the upper surface of the first insulating layer, and the lower surface of the plug is flush with the lower surface of the first insulating layer. A region protective member is formed of a second integral structure consisting of a plug and wiring. The second integral structure extends from the upper surface of the first insulating layer to the lower surface of the first insulating layer. The region protective member surrounds one of first to n-th regions (n being a natural 2 or more) partitioned by a boundary region on a horizontal plane.