The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Jan. 20, 2006
Atsuko Sakata, Kanagawa, JP;
Junichi Wada, Kanagawa, JP;
Seiichi Omoto, Kanagawa, JP;
Masaaki Hatano, Kanagawa, JP;
Soichi Yamashita, Kanagawa, JP;
Kazuyuki Higashi, Kanagawa, JP;
Naofumi Nakamura, Tokyo, JP;
Masaki Yamada, Kanagawa, JP;
Kazuya Kinoshita, Kanagawa, JP;
Tomio Katata, Kanagawa, JP;
Masahiko Hasunuma, Kanagawa, JP;
Atsuko Sakata, Kanagawa, JP;
Junichi Wada, Kanagawa, JP;
Seiichi Omoto, Kanagawa, JP;
Masaaki Hatano, Kanagawa, JP;
Soichi Yamashita, Kanagawa, JP;
Kazuyuki Higashi, Kanagawa, JP;
Naofumi Nakamura, Tokyo, JP;
Masaki Yamada, Kanagawa, JP;
Kazuya Kinoshita, Kanagawa, JP;
Tomio Katata, Kanagawa, JP;
Masahiko Hasunuma, Kanagawa, JP;
Kabushiki Kaihsa Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.