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For the Inventor, By the Inventor

Yokohama, Japan

Tomio Katata

This inventor holds 27 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignees: Kabushiki Kaisha Toshiba, International Business Machines Corporation, Siemens Microelectronics Limited. Active years: 1999-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomio Katata. Retrieved from https://idiyas.com/inventor/tomio-katata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 81.5

Average Co-Inventor Count = 3.8

ph-index = 10

Forward Citations = 349(Granted Patents)


Location History:

  • Kanagawa-ken, JP (1999)
  • Yokohama, JP (1999 - 2008)
  • Kanagawa, JP (2008 - 2012)

Company Filing History:

goldMedal24 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal2 out of 166,409 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 19 
 
Siemens Microelectronics Limited
 patents
4. 2 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2012

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Areas of Expertise:
Semiconductor Device
Oxidized Metal Film
Manufacturing Method
Thin Film Sputtering
Wiring Layer
Electrode Fabrication
Multilayer Thin Film
Sputtering Apparatus
High Throughput Process
Conductive Layer
Ternary Compound
Metallization Structure
27 patents (USPTO):Explore Patents
1. 8148274 - Semiconductor device having oxidized metal film and manufacture method of the same (2012-04-03),
2. 7994054 - Semiconductor device having oxidized metal film and manufacture method of the same (2011-08-09),
3. 7791202 - Semiconductor device having oxidized metal film and manufacture method of the same (2010-09-07),
4. 7399706 - Manufacturing method of semiconductor device (2008-07-15),
5. 7351656 - Semiconductor device having oxidized metal film and manufacture method of the same (2008-04-01),
6. 6946387 - Semiconductor device and method for manufacturing the same (2005-09-20),
7. 6768202 - Semiconductor device and method of manufacturing the same (2004-07-27),
8. 6720253 - Method of manufacturing semiconductor device having an aluminum wiring layer (2004-04-13),
9. 6699726 - Semiconductor device and method for the manufacture thereof (2004-03-02),
10. 6673704 - Semiconductor device and method of manufacturing the same (2004-01-06),
11. 6605521 - Method of forming an oxide film on a gate side wall of a gate structure (2003-08-12),
12. 6566632 - Hot plate and semiconductor device manufacturing method using the same (2003-05-20),
13. 6521927 - Semiconductor device and method for the manufacture thereof (2003-02-18),
14. 6521010 - Filter, filtering frame, and semiconductor device manufacturing method and apparatus (2003-02-18),
15. 6500686 - Hot plate and method of manufacturing semiconductor device (2002-12-31),

Title: Innovations of Tomio Katata in Semiconductor Technology

Introduction

Tomio Katata, a distinguished inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio comprising 27 patents, Katata's work has paved the way for advancements in manufacturing methods and device efficiency.

Latest Patents

Katata's latest innovations focus on semiconductor devices featuring oxidized metal films. One of his notable patents outlines a method for manufacturing a semiconductor device that involves heating a substrate with an insulation film to a specified temperature, leading to the emission of oxidizing species. This process includes forming a metal film on the insulation film while managing temperature variations and subsequently oxidizing parts of the metal film with the oxidizing species, enhancing the device's performance. Another significant patent closely mirrors the first, emphasizing the formation of multiple metal films, allowing for the integration of high melting point and noble metals, which contributes to the overall durability and functionality of the semiconductor device.

Career Highlights

Throughout his career, Tomio Katata has collaborated with leading companies, including Kabushiki Kaisha Toshiba and IBM. His tenure at these organizations has not only sharpened his skills but also provided him with the resources and platform to innovate within the semiconductor field.

Collaborations

Katata has worked alongside esteemed colleagues such as Junichi Wada and Atsuko Sakata. Their collaborative efforts have fostered a creative environment that has led to groundbreaking advancements in semiconductor technologies.

Conclusion

Tomio Katata's contributions to the semiconductor industry through his patents and collaborations showcase his commitment to innovation and excellence. His evolving work continues to influence the landscape of technology, marking him as a critical figure in the ongoing advancement of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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