The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Aug. 29, 2003
Junichi Wada, Yokohama, JP;
Atsuko Sakata, Yokohama, JP;
Tomio Katata, Yokohama, JP;
Takamasa Usui, Kawasaki, JP;
Masahiko Hasunuma, Yokohama, JP;
Hideki Shibata, Yokohama, JP;
Hisashi Kaneko, Fujisawa, JP;
Nobuo Hayasaka, Yokosuka, JP;
Katsuya Okumura, Yokohama, JP;
Junichi Wada, Yokohama, JP;
Atsuko Sakata, Yokohama, JP;
Tomio Katata, Yokohama, JP;
Takamasa Usui, Kawasaki, JP;
Masahiko Hasunuma, Yokohama, JP;
Hideki Shibata, Yokohama, JP;
Hisashi Kaneko, Fujisawa, JP;
Nobuo Hayasaka, Yokosuka, JP;
Katsuya Okumura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.