Kabushiki Kaisha Toshiba

Other

International Business Machines Corporation

Siemens Microelectronics Limited

Kabushiki Kaihsa Toshiba

Tomio Katata

Junichi Wada

Atsuko Sakata

Masahiko Hasunuma

Katsuya Okumura

Nobuo Hayasaka

Kazuyuki Higashi

Naofumi Nakamura

Takamasa Usui

Seiichi Omoto

Masaki Yamada

Hisashi Kaneko

Hideki Shibata

Masaaki Hatano

Soichi Yamashita

Kazuya Kinoshita

Yasushi Oikawa

Hiroyuki Kanaya

Hiroyuki Takenaka

Norihisa Arai

Hiroshi Mochizuki

Osamu Hidaka

Kumi Okuwada

Chi-Hua Yang

Hideaki Aochi

Sumito Ootsuki

Kenneth Parker Rodbell

Ronald G Filippi

Viraj Yashawant Sardesai

Koichi Watanabe

Darryl D Restaino

Hirokazu Ezawa

Christopher Carr Parks

Atul Champaklal Ajmera

Patrick William Dehaven

Toshiya Suzuki

Masaki Narita

Junichiro Iba

Hideto Matsuyama

Masatoshi Fukuda

Karanam Balasubramanyam

John Preston Benedict

Hitomi Yamaguchi

Hans W Poetzlberger

Shang-Bin Ko

A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Semiconductor device having oxidized metal film and manufacture method of the same

A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.

Manufacturing method of semiconductor device

A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

Semiconductor device and method for manufacturing the same

Disclosed is a semiconductor device including a semiconductor substrate, an interlayer insulating film formed on one main surface of the semiconductor substrate and having a concave portion, a liner film formed on the inner surface of the concave portion, a wiring layer formed inside the concave portion with the liner film interposed therebetween, and an agglomeration suppressing material contained in the wiring layer for suppressing agglomeration of the material constituting the wiring layer. The agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.

Semiconductor device and method of manufacturing the same

A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on a interlayer-insulating film on one principal plane of a semiconductor substrate and connecting with an Al wiring formed on the substrate and at least, an Nb liner film and NbAl alloy film are formed between the second object and the Al wiring layer.

Method of manufacturing semiconductor device having an aluminum wiring layer

The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor substrate.

Semiconductor device and method for the manufacture thereof

In order to prevent abnormal oxidation of the side wall of a polycide gate conductor layer in the oxidation heat treatment process after the RIE processing of the polycide gate conductor layer in a semiconductor memory cell, the heat treatment for oxidizing the side wall of the polycide gate conductor layer is conducted in two steps with different conditions. By conducting the first heat treatment process in an inert atmosphere, a thin oxide film is formed on the side wall of the polycide tungsten/gate conductor layer. Then by conducting the second heat treatment process in an atmosphere with a strong oxidizing property, a thick oxide film without abnormal oxidation can be formed.

Method of forming an oxide film on a gate side wall of a gate structure

An electrostatic chuck type of hot plate is disclosed which permits the temperature of a semiconductor substrate to be measured with good repeatability. In addition to an electrostatic chuck electrode and a heating electrode as provided in conventional hot plates, the inventive hot plate is further provided with two or more temperature measuring probes.

Hot plate and semiconductor device manufacturing method using the same

A semiconductor device manufacturing apparatus employs filters. The filters have openings whose diameters are reduced in proportion to the distances of the filters from cathodes. This arrangement improves the directivity of sputtered particles and evenly distributes particles among the filters to form thin films on the filters. The peripheries of the openings on the filters are curved toward the cathodes, to increase a particle catching area of each filter and thin a film to be formed on each filter. Even if the films on the filters peel off, they never go beyond the curved peripheries of the filters and never drop onto a substrate from which semiconductor devices are produced.

Filter, filtering frame, and semiconductor device manufacturing method and apparatus

The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor. substrate.

In chucking a wafer to an electrostatic chuck type hot plate mounted in a semiconductor manufacturing apparatus, the chucking force is successively applied from the central portion toward the outer peripheral portion of the wafer. Therefore, the chuck electrode is divided in its radial direction into at least two electrode portions comprising an inner circumferential electrode portion and an outer circumferential electrode portion, and the chuck voltage is applied successively from the inner circumferential electrode portion toward the outer circumferential electrode portion. The chucking force is applied first to the central portion of the wafer so as to elevate the wafer temperature. In this step, the chucking force in the outer peripheral portion of the wafer is weak so as to permit the wafer to be thermally expanded smoothly. As a result, the stress within the wafer is low so as to prevent the wafer from being broken.

Hot plate and method of manufacturing semiconductor device

Growing community of inventors

Yokohama, Japan

Tomio Katata