The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Jan. 25, 2005
Seiichi Omoto, Yokohama, JP;
Tomio Katata, Yokohama, JP;
Kazuyuki Higashi, Yokohama, JP;
Hitomi Yamaguchi, Yokohama, JP;
Hirokazu Ezawa, Tokyo, JP;
Atsuko Sakata, Yokohama, JP;
Seiichi Omoto, Yokohama, JP;
Tomio Katata, Yokohama, JP;
Kazuyuki Higashi, Yokohama, JP;
Hitomi Yamaguchi, Yokohama, JP;
Hirokazu Ezawa, Tokyo, JP;
Atsuko Sakata, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups-A,-A, and-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.