The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Dec. 26, 2007
Sachiyo Ito, Yokohama, JP;
Masahiko Hasunuma, Yokohama, JP;
Sachiyo Ito, Yokohama, JP;
Masahiko Hasunuma, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device including at least two layers of interlayer-insulator-films stacked above a substrate and at least partially formed by a low-relative-dielectric-constant-film having a relative-dielectric-constant of 3.4 or less respectively, a plurality of wirings provided at least one within each of the interlayer-insulator-film and at least partially located within the low-relative-dielectric-constant-films, a plurality of plugs provided at least one within each of the interlayer-insulator-film and connected to a lower part of the wirings, and a plurality of reinforcement members provided at least one within each of the interlayer-insulator-film with being separated from the wirings at a predetermined interval, electrically cut from the wirings and the plugs, and at least partially located within the low-relative-dielectric-constant-films, and wherein, the interlayer-insulator-films, the wirings, the plugs, and the reinforcement members satisfy a predetermined relation for each of the interlayer-insulator-film.