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For the Inventor, By the Inventor

Feldkirchen, Germany

Martin Ostermayr

USPTO Granted Patents = 24


Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 66(Granted Patents)


Location History:

  • Haar, DE (2002)
  • Felkirchen, DE (2007)
  • LaGrange, NY (US) (2010)
  • Feldkirchen, DE (2005 - 2013)
  • Beacon, NY (US) (2011 - 2014)
  • Bavaria, DE (2014)

Company Filing History:

goldMedal23 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal1 out of 106 
 
Infineon Technologies LLC
 patents
bronzeMedal1 out of 164,108 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2002-2014

where 'Filed Patents' based on already Granted Patents

24 patents (USPTO):
1. 8853791 - SRAM memory cell having a dogleg shaped gate electrode structure (2014-10-07),
2. 8846462 - Transistor level routing (2014-09-30),
3. 8765548 - Capacitors and methods of manufacture thereof (2014-07-01),
4. 8546916 - Capacitors and methods of manufacture thereof (2013-10-01),
5. 8531907 - Semiconductor memory device and method (2013-09-10),
6. 8518820 - Methods for forming contacts in semiconductor devices (2013-08-27),
7. 8426114 - L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure (2013-04-23),
8. 8223573 - Method and device for controlling a memory access and correspondingly configured semiconductor memory (2012-07-17),
9. 8076730 - Transistor level routing (2011-12-13),
10. 7995366 - Homogenous cell array (2011-08-09),
11. 7816198 - Semiconductor device and method for manufacturing the same (2010-10-19),
12. 7692974 - Memory cell, memory device, device and method of accessing a memory cell (2010-04-06),
13. 7675799 - Method of operating a memory cell, memory cell and memory unit (2010-03-09),
14. 7674703 - Gridded contacts in semiconductor devices (2010-03-09),
15. 7655563 - Method for preventing the formation of dentrites in a semiconductor (2010-02-02),

Title: Innovations and Contributions of Martin Ostermayr in Memory Technology

Introduction: Martin Ostermayr is an accomplished inventor based in Feldkirchen, Germany, with a remarkable portfolio comprising 24 patents. His inventions primarily focus on advanced memory technologies, particularly in the design and architecture of memory cells and transistor structures.

Latest Patents: Among his latest innovations is a patent for an SRAM memory cell featuring a dogleg-shaped gate electrode structure. This invention includes diffusion regions in a substrate, wherein the first gate electrode structure is designed to enhance performance through its unique geometry. Another significant patent revolves around a method for transistor-level routing, which details the formation of a high-k dielectric layer over a substrate and the creation of transistors with specific gate stack configurations to improve electrical connectivity between elements.

Career Highlights: Ostermayr has extensively contributed to the field of semiconductor technology during his tenure at Infineon Technologies AG and Infineon Technologies LLC. His work in these prestigious companies underscores his commitment to pushing the boundaries of memory and transistor technology.

Collaborations: Throughout his career, Martin Ostermayr has collaborated with notable professionals in the sector, including Peter Huber and Alexander Olbrich. These partnerships have fostered innovation and led to the development of groundbreaking technologies in memory architecture.

Conclusion: Martin Ostermayr's contributions to memory technology stand out through his numerous patents and collaborations. His work continues to influence advancements in semiconductor design and functionality, demonstrating the vital role of inventors in driving innovation forward.

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