The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2011

Filed:

Jun. 09, 2009
Applicants:

Martin Ostermayr, Beacon, NY (US);

Chandraserhar Sarma, Poughkeepsie, NY (US);

Inventors:

Martin Ostermayr, Beacon, NY (US);

Chandraserhar Sarma, Poughkeepsie, NY (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
J01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

System and method for transistor level routing is disclosed. A preferred embodiment comprises a semiconductor device including a first semiconductor device formed on a first active area in a substrate, the first semiconductor device having a first gate stack comprising a first high-k dielectric layer, a first metal layer and a first poly-silicon layer. The semiconductor device further includes a second semiconductor device formed on a second active area in the substrate, the second semiconductor device having a second gate stack comprising a second high-k dielectric layer, a second metal layer and a second poly-silicon layer. An electrical connection connects the first semiconductor device with the second semiconductor device and overlies the first active area, the second active area and a portion of the substrate between the first active area and the second active area. The electrical connection includes a high-k dielectric layer and a metal layer but not a poly-silicon layer and the metal layer is arranged directly over the high-k dielectric layer.


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