The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jan. 27, 2009
Roberto Schiwon, Hopewell Junction, NY (US);
Klaus Herold, Fishkill, NY (US);
Jenny Lian, Walkill, NY (US);
Sajan Marokkey, Wappingers Falls, NY (US);
Martin Ostermayr, LaGrange, NY (US);
Roberto Schiwon, Hopewell Junction, NY (US);
Klaus Herold, Fishkill, NY (US);
Jenny Lian, Walkill, NY (US);
Sajan Marokkey, Wappingers Falls, NY (US);
Martin Ostermayr, LaGrange, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Abstract
Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a method of manufacturing a semiconductor device includes a exposing a first photo resist layer using a first light beam thereby forming first features. The first exposure is performed by the first light beam passing through a first dipole illuminator and then a first mask. A dipole axis of the first dipole illuminator is oriented in a first direction. After exposing the first photo resist layer, forming second features using a second exposure with a second light beam. The second exposure is performed by the second light beam passing through a second dipole illuminator and then a second mask. A dipole axis of the second dipole illuminator is oriented in a second direction. The first direction and the second direction are not perpendicular. The first and the second features comprise a pattern for forming contact holes.