The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Jan. 28, 2011
Applicants:
Henning Haffner, Pawling, NY (US);
Martin Ostermayr, Beacon, NY (US);
Inventors:
Henning Haffner, Pawling, NY (US);
Martin Ostermayr, Beacon, NY (US);
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In accordance with an embodiment of the present invention, a method for making a semiconductor device comprises forming a photo sensitive layer on a semiconductive substrate, and forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle, wherein the reticle comprises an L-shapes feature having a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.