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For the Inventor, By the Inventor

Dorfen, Germany

Martin Gutsche

This inventor holds 42 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Memory. Top assignees: Infineon Technologies Ag, Qimonda Ag, Siemens Aktiengesellschaft. Active years: 2000-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martin Gutsche. Retrieved from https://idiyas.com/inventor/martin-gutsche

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42

% Patents Active = 33.3


Average Co-Inventor Count = 2.6

ph-index = 10

Forward Citations = 363(Granted Patents)


Location History:

  • Dorpen, DE (2003)
  • Dorfen, DE (2000 - 2015)

Company Filing History:

goldMedal37 out of 15,027 
 
Infineon Technologies Ag
 patents
silverMedal1 out of 555 
 
Qimonda Ag
 patents
bronzeMedal1 out of 30,874 
 
Siemens Aktiengesellschaft
 patents
4. 3 out of 834,513 
Other
 patents

Years Active: 2000-2015

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Areas of Expertise:
Vertical Interconnect Structure
Memory Device
Sublithographic Structures
Dielectric Material
Stacked Capacitor Array
Ferroelectric Memory
Microelectronic Electrode
Charge-Trapping Memory
Nanowire Electrode
Trench Capacitor
Nonvolatile Memory
ALD/CVD Processes
42 patents (USPTO):Explore Patents
1. 9177995 - Vertical interconnect structure, memory device and associated production method (2015-11-03),
2. 8420526 - Vertical interconnect structure, memory device and associated production method (2013-04-16),
3. 8084190 - Process for producing sublithographic structures (2011-12-27),
4. 8049264 - Method for producing a dielectric material on a semiconductor device and semiconductor device (2011-11-01),
5. 7998858 - Vertical interconnect structure, memory device and associated production method (2011-08-16),
6. 7605090 - Process for producing sublithographic structures (2009-10-20),
7. 7456461 - Stacked capacitor array and fabrication method for a stacked capacitor array (2008-11-25),
8. 7420199 - Resistivity changing memory cell having nanowire electrode (2008-09-02),
9. 7361549 - Method for fabricating memory cells for a memory device (2008-04-22),
10. 7348619 - Ferroelectric memory arrangement (2008-03-25),
11. 7317201 - Method of producing a microelectronic electrode structure, and microelectronic electrode structure (2008-01-08),
12. 7316951 - Fabrication method for a trench capacitor having an insulation collar (2008-01-08),
13. 7312115 - Fabrication method for a semiconductor structure having integrated capacitors (2007-12-25),
14. 7303970 - Method of fabricating dielectric mixed layers and capacitive element and use thereof (2007-12-04),
15. 7186607 - Charge-trapping memory device and method for production (2007-03-06),

Title: The Innovative Mind of Martin Gutsche

Introduction: Martin Gutsche, a distinguished inventor hailing from Dorfen, Germany, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Martin Gutsche's latest patents showcase his expertise in developing cutting-edge solutions for various industries, including telecommunications, renewable energy, and healthcare.

Career Highlights: Throughout his illustrious career, Martin Gutsche has been instrumental in revolutionizing the way we interact with technology. His innovative approach has led to the development of numerous products that have significantly impacted the lives of people around the world.

Collaborations: Martin Gutsche has collaborated with leading research institutions, universities, and companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been key to the success of many of his projects.

Conclusion: In conclusion, Martin Gutsche's passion for innovation and his relentless pursuit of excellence have established him as a visionary inventor in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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