The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
May. 12, 2005
Martin Gutsche, Dorfen, DE;
Harald Seidl, Poring, DE;
Martin Gutsche, Dorfen, DE;
Harald Seidl, Poring, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention provides a fabrication method for a semiconductor structure having integrated capacitors and a corresponding semiconductor structure. The fabrication method has the following steps of: providing a semiconductor substrate (″) having a front side (VS) and a rear side (RS); providing trenches () in the semiconductor substrate (″) proceeding from the front side (VS) of the semiconductor substrate (″); providing a respective inner capacitor electrode () in the trenches (); uncovering the inner capacitor electrodes () proceeding from the rear side (RS) of the semiconductor substrate (″); providing a capacitor dielectric () on the uncovered inner capacitor electrodes (); and providing outer capacitor electrodes () on the capacitor dielectric () on the inner capacitor electrodes ().